FAST

3D CAD data 정리 신속한 진행 및 3D CAD에서 CFD SW로의 Geometry transfer 가 불필요.
계산공간 내 유동영역 자동 검출.
벽면 근처 조밀한 격자 불필요 (Integral Boundary Layer Model 사용).
수치계산 - 이론식 - 실험에 의한 경험식 등의 조합을 사용하여 CFD 해석을 수행.
(격자 등의 문제로 수치 해를 구하기 곤란한 곳에, 경험식 /이론식 자동 적용하여 해를 구할 수 있음.)

EASY

CFD 해석에 대한 전문지식을 요구하지 않음. (3D CAD 설계자들에 유리)
3D CAD 로 설계와 CFD 해석을 수행, 설계자들은 익숙한 환경에서 쉽게 사용이 가능함.
수치계산-이론식-경험식 등의 자동 사용으로 수렴성이 매우 뛰어남.
자동으로 육면체 격자 제작하여 해석. 사용자 필요시 수동격자 제작 가능.

ACCURACY

2015년 일본자동차학회 상용 CFD SW 자동차 외부유동 해석 블라인드 테스트 시험결과 비교,
FLOEFD 는 STAR-CCM+와 함께 가장 정확한 CFD해석 SW임이 확인 됨.

1. Simple & Easy

Measuring with Simcenter T3STER is very easy. Fix the sample to the desired thermal environment, connect it through electrical wires to the tester, similarly to the normal operating conditions in case of discrete devices such as diodes, LED-s or transistors. Even complex digital IC-s can be tested through their substrate diodes, using 4 wires. 
The software provides guidance for the connections to make the system more easy to learn and use.

3. Wide Variety of Semiconductor Components

Simcenter T3STER can test most common semiconductor types, diodes, MOSFET-s, IGBT-s, digital VLSI IC-s and more. Our engineering team is always keen on finding suitable test approaches for more 'exotic' devices if necessary.

5. Fast Throughput (non-Repetitive)

Simcenter T3STER measurements are fast, as fast as the physical properties of a device allow. Using the JEDEC JESD 51-1 static test method, Simcenter T3STER will heat up a component once, then capture the cooling curve in real time, as the device cools down. Due to the excellent signal-to-noise ratio, it is enough to capture the response curve only once. It is safe to say that Simcenter T3STER applies the fastest test methodology possible.

7. Tests Components in Situ

Simcenter T3STER allows in-situ tests, it can measure the thermal performance of samples in their native, operational environment, no matter it is air cooling, cold plate mounting, a water jacket, or a component on a PCB. Our technology does not use thermocouples nor requires opening up the package as IR tests would do. This way we test the true thermal performance without distracting the thermal boundary conditions even to the slightest extent.

9. Detailed Thermal Model Calibration

For more accurate simulations, a detailed 3D equivalent of the package is the best, generic option. Simulation results are however as accurate as the model itself, any modeling error in material properties or geometry can result in inaccurate simulation data. Unfortunately material properties of thermal interface layers are often uncertain parameters even for component makers. Using Simcenter T3STER measurements as reference, our Simcenter Flotherm and Simcenter FLOEFD tools can calibrate component models to create true digital twins of the real component to achieve utmost modeling accuracy. Once the component model is calibrated to Simcenter T3STER tests, it should behave as the real physical sample for any arbitrary power input, making even complex transient simulations highly accurate.

2. Repeatable & Reproducible

Simcenter T3STER provides both repeatable and reproducible test results. Repeated measurements on the same sample will provide the same test data over and over again, eliminating the need for multiple test runs and averaging in most standard situations. This saves valuable testing time.

Simcenter T3STER measurements are reproducible as well. Measuring the same sample with any calibrated Simcenter T3STER system we produce will always provide comparable test results. This makes Simcenter T3STER measurements a 'common language' among different test groups and organizations when they share and compare information on semiconductor thermal performance. 

4. Insight into Thermal Structure

The thermal transient response curves are used for further analysis after Simcenter T3STER measurements. Our Simcenter T3STER-Master software provided with the hardware can convert the thermal responses into structure functions, which describe the heat-flow path from the semiconductor junction to the ambient. Structure functions have multiple use, can help define standard thermal metrics, such as RthJC, RthJA, can help comparison among different material choices or support failure analysis by highlighting potential structural errors in key thermal interface layers in a semiconductor package and its thermal environment. 

6. Non-Destructive

Simcenter T3STER measurements are non-destructive. After taking a test on a sample, in every case the sample remains operational. This allows Simcenter T3STER tests to be used in quality check, or even makes monitoring and sorting of actual production units based on their thermal performance.

8. Test-Based Compact Thermal Models

Structure functions calculated based on Simcenter T3STER test results are thermal R-C network models. Cutting the model at the case node of the component provides a 1D thermal behavior model of the tested package. Exporting this model to Simcenter Flotherm or Simcenter FLOEFD allows a quick and reliable method to generate a test based thermal model and simulate its behavior in a complex 3D CFD environment. This method is recommended for discrete power semiconductor packages, such as TO-220, TO-247 or common LED packages.